 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| STGE200NB60S N-CHANNEL 150A - 600V - ISOTOP PowerMESHTM IGBT TYPE STGE200NB60S s s s s s VCES 600 V VCE(sat) (typ.) 1.2 V 1.3 V IC 150 A 200 A TC 100C 25C HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY ISOTOP DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "S" identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz). INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s LOW FREQUENCY MOTOR CONTROLS s ALUMINUM WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VCES VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Gate-Emitter Voltage Collector Current (continuous) at TC = 25C Collector Current (continuous) at TC = 100C Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 200 150 400 600 4.8 - 65 to 150 150 Unit V V A A A W W/C C C ( ) PULSE WIDTH LIMITED BY SAFE OPERATING AREA June 2003 1/9 STGE200NB60S THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 0.208 30 C/W C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Collector-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 A, VGE = 0 VCE = Max Rating, TC = 25 C VCE = Max Rating, TC = 125 C VGE = 20V , VCE = 0 Min. 600 500 5 100 Typ. Max. Unit V A mA nA ON (1) Symbol VGE(th) VCE(sat) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250A VGE = 15V, IC = 100 A VGE = 15V, IC=150 A, Tj =100C Min. 3 1.2 1.2 Typ. Max. 5 1.6 Unit V V V DYNAMIC Symbol gfs Cies Coes Cres Qg Qge Qgc ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current Test Conditions VCE = 15 V , IC = 100 A VCE = 25V, f = 1 MHz, VGE = 0 VCE = 480V, IC = 100 A, VGE = 15V Vclamp = 480 V Tj = 125C , RG = 10 300 Min. Typ. 80 15600 1100 95 560 70 170 Max. Unit S pF pF pF nC nC nC A SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 100 A RG = 2 , VGE = 15 V VCC= 480 V, IC = 100 A RG=2 VGE = 15 V,Tj = 125C Min. Typ. 64 112 1800 12 Max. Unit s s A/s mJ ELECTRICAL CHARACTERISTICS (CONTINUED) 2/9 STGE200NB60S SWITCHING OFF Symbol tc tr(Voff) td(off) tf Eoff(**) Ets tc tr(Voff) td(off) tf Eoff(**) Ets Parameter Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 480 V, IC = 100 A, RGE = 2 , VGE = 15 V Tj = 125 C Test Conditions Vcc = 480 V, IC = 100 A, RGE = 2 , VGE = 15 V Min. Typ. 2.98 1.7 2.4 1.23 59 71 4.52 2.6 2.8 1.8 92 105 Max. Unit s s s s mJ mJ s s s s mJ mJ Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) 3/9 STGE200NB60S Thermal Impedance Switching Off Safe Operating Area Output Characteristics Transfer Characteristics Normalized Gate Threshold Voltage vs Temp. Transconductance 4/9 STGE200NB60S Collector-Emitter On Voltage vs Temperature Gate-Charge vs Gate-Emitter Voltage Capacitance Variations Normalized Break-down Voltage vs Temp. Total Switching losses vs Gate Resistance Total Switching losses vs Temperature 5/9 STGE200NB60S Total Switching losses vs Ic Collector-Emitter on Voltage vs Current 6/9 STGE200NB60S Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/9 STGE200NB60S ISOTOP MECHANICAL DATA DIM. MIN. A B C D E F G H J K L M N O 11.8 8.9 1.95 0.75 12.6 25.15 31.5 4 4.1 14.9 30.1 37.8 4 7.8 8.2 4.3 15.1 30.3 38.2 mm TYP. MAX. 12.2 9.1 2.05 0.85 12.8 25.5 31.7 MIN. 0.466 0.350 0.076 0.029 0.496 0.990 1.240 0.157 0.161 0.586 1.185 1.488 0.157 0.307 0.322 0.169 0.594 1.193 1.503 inch TYP. MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 G O B A N D E J K L M H C 8/9 F STGE200NB60S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 9/9 |
Price & Availability of STGE200NB60S
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |